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| ProductCategory: | RFBipolarTransistors |
| Manufacturer: | AdvancedSemiconductor,Inc. |
| TransistorType: | BipolarPower |
| Technology: | Si |
| TransistorPolarity: | NPN |
| DCCollector/BaseGainhfeMin: | 10 |
| Collector-EmitterVoltageVCEOMax: | 18V |
| Emitter-BaseVoltageVEBO: | 3.5V |
| ContinuousCollectorCurrent: | 12A |
| MaximumOperatingTemperature: | +150C |
| Configuration: | SingleDualEmitter |
| MountingStyle: | Screw |
| Package/Case: | M113 |
| Packaging: | Tray |
| Brand: | AdvancedSemiconductor,Inc. |
| MinimumOperatingTemperature: | -65C |
| OperatingFrequency: | 50MHz |
| Pd-PowerDissipation: | 183W |
| Type: | RFBipolarPower |